Abstract
Crystals of GaP have been grown by the liquid encapsulation Czochralski (LEC) technique from non-stoichiometric melts at temperatures between 1430°C and 1200°C. Using melt compositions of 36 atom per cent phosphorus (36 at% P) and 30 at% P, satisfactory growth was obtained at 0.5-0.3 in./hr. These crystals which had a maximum diameter of 0.6 in. and weighed up to 25 g were free of second phase and contained lower dislocation densities (104 cm−2 and 102 cm−2 respectively) than GaP grown from stoichiometric melts. Crystals grown at rates between 0.3-0.1 in./hr from solutions containing 20 at% P and 10 at% P exhibited some cellular growth morphology and generally contained excess gallium. Correlated with decreasing growth temperature is a large increase in the red photoluminescence quantum efficiency reaching 0.8% for a crystal grown from a 10 at% P solution.
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