Abstract
Abstract Ion implanted and deposited Si layers have been recrystallized using pulsed Nd:YAG and cw Ar ion laser irradiation and thermally assisted flash annealing. By use of Rutherford backscattering and channeling. TEM. SEM and interference optical microscopy techniques, two distinct regrowth regimes have been established. I. Liquid phase where regrowth occurs from the underlying solid-liquid interface. In this regime the regrowth layer is free of extended defects, dopant profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. II. Solid phase where regrowth occurs from the amorphous single-crystal interface. No dopant redistribution is observed.
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