Abstract

Characteristic emission from gadolinium-doped amorphous aluminum nitride thin films deposited on Si (111) substrate are studied, with cathodoluminescence and photoluminescence, for their suitability as tissue compensators in radiation treatment planning. These films are deposited by reactive sputtering at liquid nitrogen temperature, using 100–200 W rf power, 5–8 mTorr nitrogen, and a metal target of aluminum and gadolinium. Thermal annealing was performed at a temperature of 900°C. A sharp ultraviolet peak is observed at 314 nm, corresponding to 6 P 7/2 → 8 S 7/2 transition. The ultraviolet emission is intense enough to harm human tissues if it is used as a tissue compensator. Thermal annealing further enhances the intensity of ultraviolet emission, indicating that its longer use as tissue compensator will provide more harm and damage to the human body.

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