Abstract

In this paper, we will discuss the limitation of optical lithography with various resolution enhancement technologies. Lithography simulation was done by Hynix OPC Simulation Tool (HOST) based on Diffused Aerial Image Model (DAIM). The effects of numerical aperture (NA), wavelength, illumination conditions, mask and diffusion length of acid were simulated in view of resolution improvement. Diffusion length of acid is a dominant factor for resolution improvement for sub-100 nm era. As pattern size decreased, the limitation of optical lithography is more affected by diffusion length of acid. And other factors (NA, wavelength, illumination conditions and mask) will be discussed. Finally, ultimate the limitation of lithography will be discussed analytically.

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