Abstract
We successfully fabricated nitride-based light-emitting diodes (LEDs) with ∼22° undercut sidewalls. The ∼22° etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with ∼22° undercut sidewalls and standard LED were 5.1 and 3 mW, respectively - a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
