Abstract
Recent photoluminescence and admittance spectroscopy measurements point towards the defect responsible for Light-Induced Degradation (LID) being a shallow level. Dopant dependent lifetime spectroscopy and temperature dependent lifetime spectroscopy on the other hand reveal the existence of a deep level driving the recombination activity of the LID defects. There is an apparent disagreement between admittance spectroscopy results and lifetime spectroscopy results. Here we overcome this apparent disagreement and we show that a negative-U defect with one shallow level can explain both the doping dependent lifetime data and injection dependent data. The critical consequence of this model is that it readily explains the dependence of the LID defect on the hole concentration rather than the Boron concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
