Abstract
We study the evolution of the electrical characteristics (current-voltage I(V) versus temperature, capacitance-voltage versus frequency, I(V) under illumination) of Pt and Au Schottky diodes prepared on sputtered a-SiH after exposure to light (AM1). A reversible light-induced bulk effect is put forward : the density of states in the bandgap of a-SiH increases after illumination leading to a shift from the conduction band edge of the Fermi level in the bulk of the material. The surprising stability of the photovoltaic working of the device is due to the trapping of photogenerated holes which acts as an optical doping of the material.
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