Abstract
Abstract Solution-processed titanium (IV) oxide bis(2,4-pentanedionate) (TOPD) as an electron extraction layer (EEL) and the blend of thieno[3,4-b]thiophene/benzodithiophene (PTB7) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) as a photoactive layer with a power conversion efficiency (PCE) of 9.15% are demonstrated. Analysis of the current-voltage (J-V) characteristics under dark conditions provides information on the weaker leakage current of TOPD-based polymer solar cells (PSCs) compared to ZnO-based PSCs. By investigating the photovoltaic performance under different light illumination intensities, we achieved an improvement of photovoltaic performance under weak light illumination intensity for TOPD-based PSCs. The enhanced photovoltaic performance under weak light illumination intensity for TOPD-based PSCs can be experimentally explained by the higher open-circuit voltage (VOC) value under lower light illumination intensity compared to ZnO-based PSCs. This indicates that the TOPD layer in the PSCs reduced the probability of charge carrier recombination at trap sites and improved the charge carrier collection and transport efficiency under weaker light illumination intensity. Simultaneously, the similar fill factor and short circuit current density of two PSCs can be experimentally explained by the weak bimolecular recombination between the photoactive layer and indium-tin-oxide electrode with the different EEL materials under different light illumination intensity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.