Abstract
To study the mechanism of a 9R-Si hexagonal phase formation upon ion irradiation of the SiO2/Si system, three types of experimental samples have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM): SiO2/Si system irradiated by Kr+, silicon irradiated by Kr+ and silicon irradiated by (Kr+ + O+) ions. All the samples were annealed after irradiation. The first type sample shows the presence of the 9R-Si phase and PL band at ∼ 1240 nm; the third type sample shows the same PL band and twin defects; for the second type sample, the PL at 1240 nm is not detected. Based on the results, the role of mechanical stresses, radiation defects and oxygen in the formation of the hexagonal silicon phase is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
