Abstract
A vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots was fabricated for the first time. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al 0.2Ga 0.8As distributed Bragg-reflector mirrors. The length of the microcavity was 4 λ( λ = 884 nm). The cavity effect was evidenced by the difference of the PL linewidths of samples with and without the cavity.
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