Abstract
A lead selenide (PbSe) NC-based phototransistor memory (PTM), wherein graphene oxide (GO) sheets covered by Au nanoparticles (NCs) act as double charge trapping layers, is studied under near-infrared (NIR) light. The memory window (Δ<italic>V</italic><sub>th</sub>) can be significantly enlarged by light-assisted programming and erasing processes, wherein the photogenerated carriers in a PbSe NCs channel can be trapped and detrapped by the GO/Au NCs charge-trapping layers. The PTM achieved an enhanced Δ<italic>V</italic><sub>th</sub> from 0.7 V in the dark to 1.8 V under the NIR light, due to the increasing number of photogenerated charges due to the NIR light. The PTM exhibited high responsivity (<italic>R</italic>), external quantum efficiency (EQE), and detectivity (<italic>D</italic> * ) of about 13.9 A / W, 2.2 × 10<sup>3</sup> % , and 1.5 × 10<sup>8</sup> Jones, respectively. Due to the good photoresponsibility of the PbSe NCs, the PTM exhibited a large Δ<italic>V</italic><sub>th</sub> under low programming/erasing voltages under the NIR light and realized multilevel memory. The results presented on photoassisted memory may pave a way to large-area, flexible, low-temperature fabrication, and photoreactive memory devices.
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