Abstract
We have studied copper defects in p-type silicon by measuring its precipitation kinetics by means of the microwave photoconductive decay (µPCD) technique. Copper atoms precipitated during high intensity light treatment at room temperature. We used the total reflection X-ray fluorescence (TXRF) and the transient ion drift (TID) techniques to determine the bulk concentration of copper. We estimated the density and the radius of the copper precipitates as well as the average capture cross-section for precipitated copper atoms from the measured copper precipitation time constant, bulk concentration of copper, and the change in the recombination rate. We also studied how the density of oxygen defect affects the copper precipitation. Our results show that copper precipitates at two different kinds of defects.
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