Abstract
The lifetimes of some excited levels for atomic silicon are calculated using the weakest bound electron potential model theory (WBEPMT) and the quantum defect orbital theory. In the WBEPMT framework, we have employed both numerical Coulomb Approximation wave functions and numerical non-relativistic Hartree–Fock wave functions for expectation values of radii. The obtained lifetime results have been compared with theoretical and experimental data in the literature.
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