Abstract
Tin halide perovskite is the most prospective lead-free perovskite material due to its close to ideal band gap and similar optoelectronic properties to the lead counterparts. Nevertheless, the lack of a regulated crystallization process leads to considerable defects and pinholes in those tin perovskite films, further deteriorating the achievable power conversion efficiency (PCE) for related solar cells. Herein, we employed a facile Lewis base thiourea (TU) into the perovskite precursor to form a SnI2-TU as an intermediate adduct to guide the crystallization kinetics, where the interaction between SnI2 and TU was detected by Fourier transform infrared (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements, respectively. Improving the perovskite morphology with TU contributed to significant suppression of the non-radiative recombination and fast charge extraction through carrier dynamics analysis. These benefits delivered a remarkable PCE of over 10% in inverted tin perovskite solar cells, which was 24% higher than the original device. The unencapsulated device with TU retained 90% of the initial efficiency after over 1600 h in N2 atmosphere.
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