Abstract
Ga doped InP crystals are grown by the liquid encapsulated Czochralski (LEC) method. From impurity analyses of the grown crystals, effective segregation coefficients of Ga in InP, ke (Ga), are determined and the diffusion coefficient of Ga in the melt is calculated using growth rate dependence of the ke(Ga). The influence of high Ga concentration doping on single crystalline growth is investigated by X-ray topography. The results show that doped concentrations higher than 1020/cm3 in the top of the crystals lead to polycrystalline growth, probably due to large misfit lattice strain gradients.
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