Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelengths up to 570 nm

Abstract

A leak path passivation (LPP) technology for InGaN solar cells with photo-response up to 570 nm was developed by inserting in situ monolayers of Al-N into active layers. The InGaN layer in the passivated sample is partially relaxed and incorporates more than 23.5% In. By adopting in situ Al-N LPP, the open circuit voltage increases from 0.96 V to 1.35 V under one sun illumination (1.45–1.68 V under 72 suns), and the dark shunt resistance increases from 3.6 kΩ cm2 to 12.6 kΩ cm2, leading to an increase in power conversion efficiency by a factor of 2.0–2.26 (1–72 suns). This in situ Al-N LPP approach paves a way to exploit the full potential of InGaN for high efficiency solar cell application, accepting the reality of defective high-In-content thick and relaxed InGaN.