Abstract
ABSTRACTWe have investigated the electrical characteristics of Metal/Ferroelectric/High-k/Si capacitor structures using sputtered Lead-Zirconate-Titanate (Pb[Zr0.35Ti0.65]O3 or PZT) and HfO2 thin films as ferroelectric and high-k material respectively. C-V, I-V characterization has been carried out to investigate the memory window and the leakage characteristics. The dependence of the memory window and leakage current on the buffer layer thickness and device annealing temperature has been studied. X-Ray diffraction (XRD) data demonstrate crystallization of HfO2 film and increase in defects in the PZT film after N2 annealing in the temperature range of 600°C–700°C. The maximum memory window of 6.8 V is observed in the M/Fe/High-k/S structure with 8 nm buffer layer as compared to the 2.3 V in the M/Fe/S structure, annealed at the same temperature i.e. 500°C. This device is observed to be capable of handling the voltage of 38 V before breakdown as compared to the 17 V in M/Fe/S structure. The leakage current density of the order 10−6 A/cm2 is observed for the voltage sweep of +20 V.
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