Abstract
The smectic layer reformation caused by the electric field treatment (EFT) was studied in terms of X-ray diffraction profiles, electro optical (EO) response, polarization reversal current and transitional dielectric constant (TDC) measurement. From the X-ray diffraction study, it was found that the chevron layer structure was reformed to a quasi-bookshelf structure by applying a suitable amplitude of the EFT voltage. The structural reformation made the threshold characteristics of the EO steep. The shape of the polarization reversal current indicated that the surface molecular switching was delayed as the EFT voltage increased. Furthermore, from TDC measurement, it was found that the amplitude of the dielectric constant variation corresponding to FLC switching was decreased when the EFT voltage was high. These results were consistently examined on the basis of the consideration for the surface anchoring potential barrier.
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