Lattice location of Tm in Si and Ge determined from ion channeling followed by Monte Carlo simulations

Abstract

The lattice location of Tm implanted into Si(1 0 0) and Ge(1 1 1) with energy of 180 keV was determined precisely by ion channeling followed by Monte Carlo simulations of ion trajectories. The implantations were performed at 550°C with a dose of 5 × 10 14 ions/cm 2. In the case of Tm in Si, 25 at.% and 50 at.% of Tm are located in the tetrahedral interstitial site and in the random site, respectively and the rest takes the substitutional position. The assumption of the Gaussian distribution centered at the exact tetrahedral site with a standard deviation of 0.2 Å reproduced the azimuth angular-scan spectrum around the [1 1 0] axis. However, the observed angular spectrum is significantly broader than the simulated one. This is probably due to the fact that there exist slightly different Tm lattice sites from the exact tetrahedral position. For Ge(1 1 1) substrates, 25 at.% of Tm occupied the tetrahedral interstitial site and the rest was located randomly.