Abstract
We report on the lattice location of ion-implanted Cu67 in p+- and n+-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both p+- and n+-Si. Annealing in the temperature range 200–600 °C resulted in changes of near-substitutional Cu to random sites in p+-Si, while in n+- Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7–2.0 eV for near-substitutional Cu in p+-Si and 2.9(2) eV for ideal substitutional Cu in n+-Si.
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