Abstract
The sensitivity of positrons to point defects created by the irradiation of V3Si with neutrons is demonstrated. We found no indication of thermal vacancies by thermal equilibrium measurement up to 1273 K which indicates that the monovacancy formation enthalpy for V3Si isH 1V F ≧(1.84±0.14) eV. Investigations within the range of homogeneity for excess vanadium suppot the idea that substitutional defects are the dominating defect type, whereas for excess silicon a direct confirmation of existing structural vacancies as the dominating defect type is given.
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