Abstract
The method of silicon doping by thermal neutron transmutation (producing phosphorus atoms) is compared to the conventional method. Both the electronic and atomic lattice defects are considered. From accurate radioactive and electrical measurements, the numbers of carriers and phosphorus atoms are measured separately in order to derive the concentration of electronic defects. Diffusion profiles of gallium are determined by activation analysis as well as ion microprobe before and after neutron doping, which gives the influence of the doping on the concentration of the atomic defects responsible for diffusion. No difference between the methods of doping can be detected within the range of experimental errors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
