Abstract
We have studied by means of Raman scattering the crystallinity loss induced by ion-beam implantation in the In x Ga 1− x As alloy lattice matched to InP. Si + was implanted at 150 keV with fluences in the 10 12 – 5×10 14 cm −2 range. The Raman scattering signatures of implantation-induced disorder and the progressive amorphization of the In x Ga 1− x As crystal are discussed. With increasing implantation dose, the GaAs-like LO mode exhibits a gradual intensity reduction and an asymmetric broadening, while a broad peak emerges at low frequencies corresponding to the activation by the induced disorder of transverse acoustic modes. The Raman scattering measurements have allowed us to check the full amorphization of the In 0.53Ga 0.47As for a Si + implantation dose of 5×10 14 cm −2 .
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