Laterally Inhomogeneous Barrier Analysis Using Capacitance–Voltage Characteristics of Identically Fabricated Schottky Diodes

Abstract

Au Schottky contacts (50 dots) on n-Si (100) were fabricated by thermal evaporation under the same conditions. The mean of the electrical parameters of the diodes were investigated by means of capacitance–voltage (C–V) measurements at 1 MHz. Even if the diodes were all equally fabricated, there was a diode-to-diode change. The values of barrier height (ΦB) were determined from the C −2–V characteristics, which ranged from 0.812 eV to 0.837 eV. The Gaussian fit of the barrier height distributions gave a mean of barrier height value of 0.822 eV and a standard value of 0.005 eV. Furthermore, the mean values of other parameters such as the carrier donor concentration (N D), the diffusion potential at zero bias (V 0), the Fermi level (E F), the image force lowering (ΔΦb) and the space charge layer width (W D) were investigated and determined to be 1.311 × 1015 cm−3, 0.575 V, 0.257 eV, 1.363 × 10−2 eV, and 7.573 × 10−5 cm, respectively.