Abstract
I investigate the lateral transport of photoexcited carriers in semiconductor superlattices by microphotoluminescence imaging. Tuning the excitation excess energy, I find that the transport length of carriers shows pronounced and regular oscillation feature with a period of about 5 meV. Such a behavior is not observed from quantum-well structure under similar conditions, confirming it as an intrinsic property of carriers in superlattices. A qualitative explanation is proposed based on folding of the Brillouin zone and of the phonon dispersion. The experimental result reveals the complication of lateral transport process and implies a coupling between lateral and vertical transports of carriers in superlattice.
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