Abstract
In this letter, lateral β-Ga2O3 MOSFETs with source field plate are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating β-Ga2O3 substrate. The drain extension in the source field plate effectively suppresses the peak electric field in the Ga2O3 channel, and improves the breakdown voltage greatly. Moreover, fluorinert FC-770 is used to reduce air breakdown potential during the breakdown testing. The breakdown voltage of the device with Lsd of 28 μm is measured as high as 2360 V, which is the highest value in reported lateral Ga2O3 MOSFET. Besides, Si-ion implantation is adopted to reduce the ohmic contact resistance (Rc). The value of specific on-resistance (Ron,sp) is calculated to be 560 mΩ cm2, which is a recorded value under such high breakdown voltage, and also lower than the theoretical limit of Si-based power devices under the same breakdown voltage.
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