Abstract
An advanced model to explain the current spreading phenomenon of a conventional GaN-based light-emitting diode is presented. For this work, an equivalent circuit, consisting of the two lateral resistance components of the p-transparent electrode and the n-type layer is proposed. Theoretical calculations clearly reveal that the current density crowds near the n or p pads according to the device parameters and has an exponential behavior as a function of the lateral length. Based on these results, appropriate device parameters including the critical transparent-electrode thickness were determined, leading to a perfectly uniform current distribution. It was even possible to demonstrate the ideal device geometry without the need for a transparent electrode such as an interdigitated structure.
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