Abstract
A 1.3-µm npn-AlGaInAs transistor laser (TL) on Fe-doped semi-insulating (SI) InP substrate is realized for the first time with improved lasing characteristics by adopting a p-GaInAsP base layer with narrower bandgap and a 4-µm-thick Au electrode. The narrower bandgap is introduced to improve a current gain. The 4-µm-thick Au electrode is introduced to improve thermal characteristics by electrolytic plating. A current gain of 0.27, which is 1.5 times higher than that in our previous report, can be achieved due to the narrower bandgap. Moreover, lasing operation up to 40 °C that is attributed to the lower thermal resistance of the device is achieved by Au plating. The thermal resistance of a TL with Au plating is 20% lower than that of a TL without Au plating, and the temperature is the highest temperature operation for 1.3-µm TL.
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