Abstract
A diode-pumped Tm, Ho:GdVO4 laser with a side-pumping configuration is demonstrated for the first time to our knowledge. Optimum Tm and Ho dopant concentrations for GdVO4 are somewhat lower than those for garnet and fluoride crystals. With a 3% Tm, 0.3% Ho:GdVO4 crystal an output energy of 31.2 mJ and a slope efficiency of 14.5% were obtained in normal-mode operation at room temperature.
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