Abstract
The characteristics of the X-ray and gamma pulses as well as pulsed proton fluxes induced by the action of femotsecond laser pulses (800 nm, 1018 W/cm2) on the surface of liquid gallium and solid molybdenum targets are measured. Estimated calculations show the possibility in principle of availability of these ionizing radiation sources for experimental simulation of single-event effects in advanced microelectronic components with a high degree of integration.
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