Abstract
In this paper we introduce a laser-plasma driven method for the production of carbon based nanomaterials and in particular bi- and few-layers of Graphene. This is obtained by using laser-plasma exfoliation of amorphous Graphite in a liquid solution, employing a laser with energy in the order of 0.5 J/mm2. Raman and XPS analysis of a carbon colloidal performed at different irradiation stages indicate the formation of Graphene multilayers with an increasing number of layers: the amount of layers varies from a monolayer obtained in the first few seconds of the laser irradiation, up to two layers obtained after 10 s, and finally to Graphite and amorphous carbon obtained after 40 s of irradiation. The obtained colloidals are pure, without any presence of impurities or Graphene oxides, and can easily be deposited onto large surfaces (in the order of cm2) for being characterized or for being used in diverse applications.
Highlights
Graphene is one of the most promising materials for nanoscience applications[1,2,3]
Our Graphene growth method is based on the laser exfoliation (LE) of amorphous Graphite, realized by using an experimental method that is typically employed in the conventional Laser-method for nanomaterials synthesis, the “Laser Ablation Synthesis in Solution” (LASiS)
From the classical Laser Ablation technique employed for the synthesis of nanoparticles, where the approach is typically bottom/up, the physical phenomena involved in the LE can be attributed to both, a top/down and a bottom/up approach: When the laser irradiates the carbon surface, it generates different phenomena such as the detachment of single carbon atoms (which aggregate in amorphous carbon particles), and the exfoliation of a single or multi-layer of Graphene
Summary
Graphene is one of the most promising materials for nanoscience applications[1,2,3]. This simple 2-D material, composed of a single layer of carbon atoms, is characterized by high electron mobility and a field-generated band gap, it is defined as a zero-gap semiconductor[4]. Alternative methods for the production of Graphene are epitaxial growth on metal surfaces or graphitization of hexagonal SiC8,9 In all these cases, the quality of Graphene is strictly related to the substrate properties such as size, crystallinity, purity, since, to the CVD, these production processes require a transfer. The quality of Graphene is strictly related to the substrate properties such as size, crystallinity, purity, since, to the CVD, these production processes require a transfer In addition to these processes, recently laser-driven methods for the synthesis of nanomaterials were proposed as alternative to chemical techniques[10]. We synthesize bi-layers of Graphene in 10 s of laser irradiation, demonstrating the possibility of synthesizing mono or multi-layer by changing the laser irradiation time
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