Abstract
Raman and photoluminescence (PL) spectra of porous silicon (PS) were examined as functions of laser irradiation time and laser intensities. The temporal evolution shows three stages, which depend on the laser intensity as follows: (a) For relatively low intensities, the Raman and PL spectra hardly change with irradiation time during our experiments. (b) For intermediate laser levels of 0.84–1.19 W/cm 2, the Raman and PL peaks have similar quasiperiodic oscillatory behavior for some time and after that their frequencies increase and finally stay unchanged. (c) For higher irradiation levels, the frequencies and intensities of Raman and PL peaks increase monotonically and saturate finally. We attribute these results to both the laser-induced oxidation and the structural instabilities of nanocrystallites in PS. The experimental results indicate that the intense PL intensity of PS may be closely related to this structural change of microcrystallites.
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