Abstract
ABSTRACTRecent studies have shown the potential of laser-induced chemical etching to become a powerful technique for processing electronic materials. In this paper, the unique strengths and limitations of the laser chemical approach are examined. Some photon-enhanced reaction mechanisms, in particular silicon-halogen reactions, are discussed to illustrate the many facets of the electronically, vibrationally and thermally activated surface processes. It is suggested that the field-assisted diffusion mechanism proposed by Winters, Coburn and Chuang may also be applicable to some photon-induced etching reactions. In addition, the salient features of the laser and the plasma-assisted etching methods are compared. The challenges to resolve certain fundamental and practical difficulties involved in developing the laser technique for processing technology are also outlined.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
