Abstract
We demonstrate laser direct growth of few layer graphene on a silicon substrate. In our study, a continuous wave laser beam was focused on a poly(methyl methacrylate) (PMMA)-coated silicon wafer to evaporate PMMA and melt the silicon wafer. Carbon atoms, decomposed from PMMA, were absorbed by the molten silicon surface, and then separated from silicon in the cooling process to form few-layer graphene. This Si-catalyzed method will provide a new approach and platform for applications of graphene.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
