Abstract
The graphene oxide (GO) film embossing and reduction was demonstrated under femtosecond laser pulses. The best conductivity of laser reduced GO film of 200Ω/□ was achieved for fs laser pulses energy of 35–45nJ and 10–25 pulses per µm. We demonstrate the patterned laser reduction over the embossed GO film that holds it integrity and conductivity. Laser reduced GO properties was studied by Raman, SEM and sheet resistance measurements.
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