Abstract
The 10 μm scale patterned SiO2 films with excellent insulating quality has been directly deposited by laser chemical vapor deposition projection printing. Leakage current through the SiO2 film was kept within permissible limits for large scale integration (LSI) functioning. This new local insulating scheme substantially extends the potential of laser direct writing circuit restructuring technology, such as in locally insulating two crossing interconnections on LSIs.
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