Abstract
This paper presents a method of applying surface sputtering process in order to improve the displacement of an electrothermal V-shaped actuator (EVA) fabricated by the traditional SOI-MEMS technology. After sputtering, the measured resistance as well as resistivity of silicon EVA is approximately 1.55 times lower than non-sputtering. The displacements of both calculation and simulation in case of applying sputtering and non-sputtering were also compared. The results showed that the displacement of the sputtering V-shaped actuator is two times larger than non-sputtering at the same driving voltage of 16 V (both of calculation and simulation). The experimental results explained that the driving voltage of sputtering-specimen reduces about 40 and 48.4% at the same displacement (corresponding to 8 and 22 µm) in comparison with non-sputtering counterpart.
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