Abstract
Magnetic tunnel junctions (MTJs) switched by spin-orbit torque (SOT) have attracted substantial interest owing to their advantages of ultrahigh speed and prolonged endurance.Both field-free magnetization switching and high tunneling magnetoresistance (TMR) are critical for the practical application of SOT magnetic random access memory (MRAM).In this work, we propose an MTJ structure based on an iridium (Ir) bottom layer. Ir metal is a desirable candidate for field-free SOT switching owing to its strong intrinsic spin Hall conductivity (SHC), which can be enhanced via doping. Herein, we study TMR in Ir-based MTJs with symmetric and asymmetric structures.Ir-based MTJs exhibit large TMR, which can be further enhanced by heavy metal symmetry owing to the resonant tunneling effect. Our comprehensive investigations illustrate that Ir-based MTJs are promising candidates for realizing SOT switching and high TMR.
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