Abstract
A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT's. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and load-pull characterization, and investigate parameter-spreads due to fabrication process variations. An enhanced Newton algorithm is presented for solving the nonlinear system of equations for the model and associated circuit simulator, which allows a faster and more robust solution than contemporary quasi-Newton nonlinear schemes. The model has been applied to the characterization of heterojunction bipolar transistor (HBT) microwave power amplifiers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.