Abstract
A numerical large-signal analysis of the silicon pnp BARITT diode is presented. This extends previous works to practical device structures. The diode admittance, power generation density, efficiency and quality factor are studied as functions of oscillation amplitude, frequency and bias current density. The results are found to be in substantial agreement with large-signal experimental measurements. A typical pnp structure optimised for operation at 10 GHz has an active region doping density of 2 × 10 15/cm 3, a width of 5.5 μm and a punch-through voltage of 40 V. Negative resistance occurs over the frequency range from about 8 GHz to about 14 GHz. The device Q at 10 GHz varies from a small-signal value of about −10 to a large-signal value of about −100. The conversion efficiency at 10 GHz is about 5% at a bias current density of 25 A/cm 2 and falls to about 2% at 200 A/cm 2. Maximum r.f. power output occurs at an r.f. amplitude of about 15 V and rises with bias current density to a maximum value of about 170 W/cm 2 at 200 A/cm 2.
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