Abstract
An unusually high Schottky barrier height (SBH) of 0.82 eV has been observed at Au/n-InP(110) interfaces with one monolayer of Sb as an interlayer using photoemission techniques. For Au deposited on clean cleaved InP(110), Au-In alloying that occurs with increasing Au coverage destroys interfacial perfection. The resulting Fermi level position lies ∼ 0.5 eV below the conduction band minimum, as is common for metal interfaces with clean cleaved InP. However, for InP surfaces first passivated with one monolayer of Sb, this Au–In alloying is completely inhibited. An abrupt interface results in an increased possibility of a low interface defect density. This represents a possible way to control of SBH and produces high SBH for n-InP.
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