Abstract
Precise determination of composition is requisite for AlxGa1‐xN‐based energy band engineering. Secondary cluster ions in a time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) full spectrum are introduced for accurate quantification of Al in AlxGa1‐xN for AlGaN‐based devices. It was found that statistical analysis with huge number of large secondary cluster ions (without small ions) show much better linear dependence with apparent compensation of matrix effect, particularly in negative polarity. For AlxGa1‐xN with x = 0 to 0.7, x values calculated based on large negative cluster ions (NCIs) show excellent linear dependence with real values. Besides, atomic count ratio of C (Al)/C (Ga) and C (Ga)/C (Al) also shows great linear relationships with corresponding mole fraction ratios in a large range. Overlap of these linear ranges offers a reliable and convenient quantification protocol of AlxGa1‐xN covering a full range of x = 0 to 1. This study verifies that the secondary cluster ions are beneficial for quantification of AlxGa1‐xN‐based materials.
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