Abstract
Topological insulator bismuth telluride (Bi2Te3), an exotic state of quantum matter, has broad application prospects in next-generation optoelectronic devices. However, photoexcited carriers in Bi2Te3 usually relax rapidly due to the lack of a large band gap. Herein, high-quality Bi2Te3/Si heterojunction is successfully synthesized by a low-cost modified two-step solvothermal method to grow large-scale free-standing Bi2Te3 nanosheets on a Si substrate. Benefiting from the promotion of photogenerated carrier separation and transport by the built-in electric field at the Bi2Te3/Si heterojunction interface, the Bi2Te3/Si heterojunction photodetector exhibits a high responsivity of 16.44 mA W−1, a high specific detectivity of 2.44 × 1011 Jones, and fast rise/recovery times of 11/13 ms under 470 nm illumination at zero bias. Additionally, the device has potential applications in high-resolution imaging. In view of its overall photosensitivity performance and low cost, the Bi2Te3/Si heterojunction synthesized by the solvothermal method has a promising application in fast broadband photodetectors, and also provide a new route for the growth of Bi2Te3 nanosheets on substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
