Abstract
Structured excimer laser back side irradiation of thin SiOx-films on fused silica substrates is used for the formation of complex micro- and nano-patterns. A polymeric superstrate serving as a confinement layer on top of the SiOx-film allows the formation of very smooth and regular patterns. Depending on laser processing parameters, either arrays of blisters or cups, or grids with free standing wires below 100 nm in diameter can be fabricated. To obtain these nano-features with high structure resolution on a comparatively large area with a single KrF-laser pulse (wavelength 248 nm), an optical system combining a beam homogenizer with a high resolution mask imaging optical system has been established. At fluences in the range of 300 to 400 mJ/cm² very regular grid patterns with wires detached from the substrate and nodes attached to the substrate are obtained. The free standing wires have diameters down to less than 100 nm. The patterned SiOx-material can be oxidized to SiO2 by thermal or laser treatment.
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