Abstract
AbstractIn this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)‐oriented Si wafers. The NWs, grown at 620 °C by metal–organic vapor‐phase epitaxy, are vertically aligned and ∼30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back‐gated, single InAs NW field‐effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology.
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