Abstract
Large (4.3 mm2) area SiC BJTs were demonstrated with a current gain of 117 and a specific on-resistance of 2.8 mΩcm2. The open-base and open-emitter breakdown voltages are stable and with margin sufficient for 1200 V blocking. Fast and tail-current free switching behaviour was shown with rise- and fall-times in the range of 10-30 ns and the SiC BJTs were shown to be rugged in short-circuit and unclamped inductive switching.
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