Landau level transitions in InAs/AlSb/GaSb quantum wells**Project supported by the National Natural Science Foundation of China (Grant Nos. 61076092 and 61290303).

Abstract

The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band k·p approach without making the axial approximation. At zero magnetic field, for a quantum well with a wide InAs layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron–hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron–hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.