Abstract
This work deals with determining the optimum thickness of the lamella wafer of silicon solar cell. The (p) base region makes up the bulk of the thickness of the wafer. This thickness has always been a factor limiting the performance of the solar cell, as it produces the maximum amount of electrical charges, contributing to the photocurrent. Determining the thickness of the wafer cannot be only mechanical. It takes into account the internal physical mechanisms of generation-diffusion-recombination of excess minority carriers. They are also influenced by external factors such as temperature and magnetic field. Under these conditions, magneto transport equation is required to be applied on excess minority carrier in lamella base silicon solar cell. It yields maximum diffusion coefficient which result on Lorentz law and Umklapp process. Then from photocurrent, back surface recombination velocity expressions are derived, both maximum diffusion coefficient and thickness dependent. The plot of the back surface recombination calibration curves as function of lamella width, leads to its maximum values, trough intercept points. Lamella optimum width is then obtained, both temperature and magnetic field dependent and expressed in relationships to show the required base thickness in the elaboration process.
Highlights
This thickness has always been a factor limiting the performance of the solar cell, as it produces the maximum amount of electrical charges, contributing to the photocurrent
Magneto transport equation is required to be applied on excess minority carrier in lamella base silicon solar cell
The vertical multi-junction silicon solar cells (VMJ) [52] [53] [54] [55], use materials having charge carriers with short diffusion length, but its architecture gives the advantage of excess minority carriers to be collected, without traveling great distances
Summary
The vertical multi-junction silicon solar cells (VMJ) [52] [53] [54] [55], use materials having charge carriers with short diffusion length, but its architecture gives the advantage of excess minority carriers to be collected, without traveling great distances. The low thickness base can be combined with two emitter allowing the collection of minority carrier (PVMJ) [56] [57], or by existence a rear field (junction p/p+) who drives them back, reducing the distance to be covered (SVMJ) [58] This rear field induces a recombination velocity minority charge carriers (Sb) that characterize the back surface of solar cell (BSF or ohmic contact) and gives the rate of charge carrier loss [27] [28] [29] [30] [48] [49]. This allows extending the life of minority charge carriers in lamella and promotes the solar cell performance, under the effect of both external magnetic field and temperature
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Electromagnetic Analysis and Applications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.