Abstract
This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory (FRAM). La-doped SrBi2Ta2O9 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films (Theating=800 °C). Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.
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