Abstract
The role of native and radiation-induced defects in the state switching kinetics for one-dimensional systems (nanowires, molecular single-chain magnets, biological macromolecules, and many others) has been studied. An analytical approach to the description of the influence of randomly located defects on the dynamics of new-phase domains is developed using an analogy with stochastic processes in queueing theory. This method makes it possible to calculate threshold phenomena and the dependence of switching fields on material parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
